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| MUN5311DW1T1G Series Dual Bias Resistor Transistors Preferred Devices NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1G series, two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium. Features (3) http://onsemi.com (2) R1 Q1 R2 (4) R2 Q2 R1 (5) (6) (1) * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 6 1 MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc 1 Symbol PD Max 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 670 (Note 1) 490 (Note 2) Max 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) 493 (Note 1) 325 (Note 2) 188 (Note 1) 208 (Note 2) -55 to +150 Unit mW mW/C C/W SOT-363 CASE 419B STYLE 1 MARKING DIAGRAM 6 xx M G G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Thermal Resistance - Junction-to-Lead Junction and Storage Temperature xx = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. RqJA Symbol PD Unit mW mW/C C/W C/W C ORDERING AND DEVICE MARKING INFORMATION See detailed ordering, shipping, and specific marking information in the table on page 2 of this data sheet. RqJA RqJL TJ, Tstg Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad (c) Semiconductor Components Industries, LLC, 2009 October, 2009 - Rev. 12 1 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1G Series ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G Package SOT-363 (Pb-Free) SOT-363 (Pb-Free) SOT-363 (Pb-Free) SOT-363 (Pb-Free) SOT-363 (Pb-Free) SOT-363 (Pb-Free) SOT-363 (Pb-Free) SOT-363 (Pb-Free) SOT-363 (Pb-Free) SOT-363 (Pb-Free) SOT-363 (Pb-Free) SOT-363 (Pb-Free) Marking 11 12 13 14 15 16 30 31 32 33 34 35 R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 R2 (K) 10 22 47 47 3000 / Tape & Reel 1.0 2.2 4.7 47 47 47 Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MUN5311DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G ICBO ICEO IEBO - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 - - nAdc nAdc mAdc Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc http://onsemi.com 3 MUN5311DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) (Continued) Characteristic ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5335DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5311DW1T1G MUN5312DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G MUN5313DW1T1G MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G MUN5330DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5331DW1T1G MUN5332DW1T1G hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 - - - - - - - - - - - - - - - - - - - - - - - - 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 60 100 140 140 350 350 5.0 15 30 200 150 140 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Vdc 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc - - - - - - - - - - - - Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) http://onsemi.com 4 MUN5311DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) (Continued) Characteristic ON CHARACTERISTICS (Note 4) Input Resistor MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 - 0.8 0.055 0.38 0.038 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 - 1.0 0.1 0.47 0.047 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 - 1.2 0.185 0.56 0.056 kW Symbol Min Typ Max Unit Resistor Ratio MUN5311DW1T1G/MUN5312DW1T1G/MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G/MUN5316DW1T1G MUN5330DW1T1G/MUN5331DW1T1G/MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% R1/R2 ALL MUN5311DW1T1G SERIES DEVICES 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 RqJA = 490C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve http://onsemi.com 5 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5311DW1T1G NPN TRANSISTOR 1 IC/IB = 10 TA = -25C 25C 0.1 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 100 VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 10 25C TA = -25C C ob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 VO = 5 V 0.001 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 6 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5311DW1T1G PNP TRANSISTOR VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = -25C 0.1 25C 75C TA = 75C 25C 100 -25C 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 10 25C TA = -25C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 7 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1G NPN TRANSISTOR 1 IC/IB = 10 25C 0.1 TA = -25C 75C hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75C 25C -25C 100 VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 0.01 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25C 100 IC, COLLECTOR CURRENT (mA) 75C 25C TA = -25C 3 C ob , CAPACITANCE (pF) 10 1 2 0.1 1 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 8 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1G PNP TRANSISTOR 10 IC/IB = 10 h FE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 TA = -25C 25C TA = 75C 25C 100 -25C 75C 0.1 0.01 10 0 20 IC, COLLECTOR CURRENT (mA) 40 50 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 10 25C TA = -25C C ob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0.001 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 9 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5313DW1T1G NPN TRANSISTOR 10 IC/IB = 10 1000 h FE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 100 VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 25C 75C TA = -25C 0.1 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 1 f = 1 MHz IE = 0 V TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 10 25C TA = -25C 0.8 C ob , CAPACITANCE (pF) 0.6 1 0.4 0.1 0.2 0.01 VO = 5 V 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 10 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5313DW1T1G PNP TRANSISTOR 1 IC/IB = 10 1000 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TA = 75C 25C 100 -25C TA = -25C 75C 0.1 25C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 1 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C 25C -25C IC, COLLECTOR CURRENT (mA) 0.8 C ob , CAPACITANCE (pF) 10 1 0.6 0.4 0.1 0.2 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 11 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5314DW1T1G NPN TRANSISTOR 1 h FE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 0.1 75C 300 VCE = 10 250 25C 200 -25C 150 100 50 0 TA = 75C VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 12 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5314DW1T1G PNP TRANSISTOR VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) TA = -25C 25C 0.1 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25C -25C TA = 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25C TA = -25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 13 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5315DW1T1G NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C 0.1 -25C 0.01 25C TA = -25C 100 25C 1000 75C VCE = 10 V 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 42. VCE(sat) versus IC Figure 43. DC Current Gain 12 10 8 6 4 2 0 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 25C 1 0.1 0.01 TA = -25C Cob, CAPACITANCE (pF) VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 46. Input Voltage versus Output Current http://onsemi.com 14 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5315DW1T1G PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C -25C 0.01 TA = -25C 25C 1000 75C VCE = 10 V 0.1 25C 100 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 47. VCE(sat) versus IC Figure 48. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 1 0.1 0.01 TA = -25C 25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 49. Output Capacitance Figure 50. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 51. Input Voltage versus Output Current http://onsemi.com 15 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5316DW1T1G NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C -25C 0.01 TA = -25C 25C 1000 75C VCE = 10 V 0.1 25C 100 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 52. VCE(sat) versus IC Figure 53. DC Current Gain 12 10 8 6 4 2 0 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 25C 1 0.1 0.01 TA = -25C Cob, CAPACITANCE (pF) VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 1 TA = -25C 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 56. Input Voltage versus Output Current http://onsemi.com 16 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5316DW1T1G PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = -25C 100 25C 1000 75C VCE = 10 V 0.1 -25C 0.01 75C 25C 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 57. VCE(sat) versus IC Figure 58. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 10 1 0.1 0.01 75C 25C TA = -25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 59. Output Capacitance Figure 60. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 1 TA = -25C 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 61. Input Voltage versus Output Current http://onsemi.com 17 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5330DW1T1G NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C -25C 25C 0.01 hFE, DC CURRENT GAIN 1000 VCE = 10 V 0.1 100 75C 10 25C TA = -25C 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 Figure 62. VCE(sat) versus IC Figure 63. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 TA = -25C Vin, INPUT VOLTAGE (VOLTS) 75C 25C 10 TA = -25C 1 75C 25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 0.001 Figure 64. Output Current versus Input Voltage Figure 65. Input Voltage versus Output Current http://onsemi.com 18 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5330DW1T1G PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C -25C hFE, DC CURRENT GAIN 100 0.1 25C 10 75C 25C TA = -25C VCE = 10 V 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 66. VCE(sat) versus IC Figure 67. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 10 1 0.1 0.01 75C 25C TA = -25C VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 68. Output Capacitance Figure 69. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 70. Input Voltage versus Output Current http://onsemi.com 19 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5331DW1T1G NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C -25C 0.01 hFE, DC CURRENT GAIN 1000 VCE = 10 V 0.1 25C 100 75C 10 TA = -25C 25C 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 71. VCE(sat) versus IC Figure 72. DC Current Gain 12 10 8 6 4 2 0 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 10 75C 25C 1 0.1 0.01 TA = -25C Cob, CAPACITANCE (pF) VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 73. Output Capacitance Figure 74. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 75. Input Voltage versus Output Current http://onsemi.com 20 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5331DW1T1G PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C -25C 0.01 hFE, DC CURRENT GAIN 100 0.1 25C 10 75C 25C TA = -25C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 76. VCE(sat) versus IC Figure 77. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C 100 75C 10 1 0.1 0.01 VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = -25C 25C 0.001 Figure 78. Output Capacitance Figure 79. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 80. Input Voltage versus Output Current http://onsemi.com 21 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5332DW1T1G NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 0.1 -25C 25C hFE, DC CURRENT GAIN 75C 1000 VCE = 10 V 100 25C 10 TA = -25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 81. VCE(sat) versus IC Figure 82. DC Current Gain 12 10 8 6 4 2 0 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 10 75C Cob, CAPACITANCE (pF) 25C 1 0.1 0.01 TA = -25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 83. Output Capacitance Figure 84. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 85. Input Voltage versus Output Current http://onsemi.com 22 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5332DW1T1G PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C 1000 VCE = 10 V 0.1 -25C 0.01 25C 75C 100 10 TA = -25C 25C 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 86. VCE(sat) versus IC Figure 87. DC Current Gain 6 5 4 3 2 1 0 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 10 1 0.1 0.01 TA = -25C 75C 25C Cob, CAPACITANCE (pF) VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 88. Output Capacitance Figure 89. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 90. Input Voltage versus Output Current http://onsemi.com 23 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5333DW1T1G NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C 100 TA = -25C 1000 VCE = 10 V 0.1 -25C 0.01 75C 25C 25C 10 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 91. VCE(sat) versus IC Figure 92. DC Current Gain 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 10 1 75C 25C TA = -25C 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 93. Output Capacitance Figure 94. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 95. Input Voltage versus Output Current http://onsemi.com 24 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5333DW1T1G PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 0.1 -25C 0.01 25C hFE, DC CURRENT GAIN 75C 100 TA = -25C 1000 VCE = 10 V 25C 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 96. VCE(sat) versus IC Figure 97. DC Current Gain 8 7 Cob, CAPACITANCE (pF) 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 25C 1 0.1 0.01 TA = -25C VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 98. Output Capacitance Figure 99. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 100. Input Voltage versus Output Current http://onsemi.com 25 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5334DW1T1G NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C -25C 25C hFE, DC CURRENT GAIN 1000 75C 100 TA = -25C VCE = 10 V 0.1 25C 0.01 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 101. VCE(sat) versus IC Figure 102. DC Current Gain 3.5 3 Cob, CAPACITANCE (pF) 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 10 1 0.1 0.01 TA = -25C VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 75C 25C 0.001 Figure 103. Output Capacitance Figure 104. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 10 TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 105. Input Voltage versus Output Current http://onsemi.com 26 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5334DW1T1G PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V 75C 100 TA = -25C 0.1 75C -25C 25C 0.01 25C 10 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 106. VCE(sat) versus IC Figure 107. DC Current Gain http://onsemi.com 27 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5335DW1T1G NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C -25C hFE, DC CURRENT GAIN 1000 VCE = 10 V 75C 100 TA = -25C 0.1 25C 25C 0.01 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 108. VCE(sat) versus IC Figure 109. DC Current Gain 12 10 8 6 4 2 0 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 10 1 0.1 0.01 75C 25C Cob, CAPACITANCE (pF) TA = -25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 110. Output Capacitance Figure 111. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 1 TA = -25C 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 112. Input Voltage versus Output Current http://onsemi.com 28 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5335DW1T1G PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C hFE, DC CURRENT GAIN 1000 75C 100 VCE = 10 V 0.1 -25C 0.01 25C TA = -25C 25C 10 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 113. VCE(sat) versus IC Figure 114. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 10 1 0.1 0.01 25C 75C TA = -25C VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 115. Output Capacitance Figure 116. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 75C 1 25C TA = -25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 117. Input Voltage versus Output Current http://onsemi.com 29 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5336DW1T1G NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1 1000 75C 100 TA = -25C 25C 0.1 -25C 25C 75C 10 0.01 IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 118. VCE(sat) versus IC Figure 119. DC Current Gain 1.2 IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 f = 1 MHz IE = 0 V TA = 25C 100 25C 10 75C TA = -25C 1 VO = 5 V 0.1 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 120. Output Capacitance Figure 121. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 25C 10 TA = -25C 1 75C 0 2 VO = 0.2 V 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 20 Figure 122. Input Voltage versus Output Current http://onsemi.com 30 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5336DW1T1G PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 -25C hFE, DC CURRENT GAIN 75C 0.1 25C 1000 75C 100 TA = -25C VCE = 10 V 25C 0.01 10 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 123. VCE(sat) versus IC Figure 124. DC Current Gain 5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 4.5 Cob, CAPACITANCE (pF) 100 10 1 0.1 0.01 TA = -25C 75C 25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 125. Output Capacitance Figure 126. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 127. Input Voltage versus Output Current http://onsemi.com 31 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5337DW1T1G NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) 1 1000 75C TA = -25C 25C TA = -25C 0.1 75C 100 25C 0.01 IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 128. VCE(sat) versus IC Figure 129. DC Current Gain 1.4 Cob, CAPACITANCE (pF) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 10 1 0.1 0.01 25C 75C TA = -25C VO = 5 V 0.001 0 1 2 3 4 5 6 7 8 9 10 11 Vin, INPUT VOLTAGE (VOLTS) Figure 130. Output Capacitance Figure 131. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 TA = -25C 75C 1 25C 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 132. Input Voltage versus Output Current http://onsemi.com 32 MUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5337DW1T1G PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 -25C 75C 25C 1000 75C 100 TA = -25C VCE = 10 V 0.1 hFE, DC CURRENT GAIN 25C 0.01 10 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 133. VCE(sat) versus IC Figure 134. DC Current Gain 5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 4.5 Cob, CAPACITANCE (pF) 100 10 1 0.1 0.01 75C 25C TA = -25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 135. Output Capacitance Figure 136. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) 10 TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 137. Input Voltage versus Output Current http://onsemi.com 33 MUN5311DW1T1G Series PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W D e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. DIM A A1 A3 b C D E e L HE MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 6 5 4 HE 1 2 3 -E- b 6 PL 0.2 (0.008) M E M A3 C A STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 SOLDERING FOOTPRINT* L 0.50 0.0197 A1 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC-88/SC70-6/SOT-363 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 34 MUN5311DW1T1/D |
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